FEPT-C-BASED SPUTTERING TARGET AND PROCESS FOR PRODUCING SAME

WIPO Patent Application WO/2012/132939

A1

The present invention enables an FePtC-based thin film having a high carbon content to be formed from a single target without requiring the use of a plurality of targets. The invention provides an FePt-C-based sputtering target which comprises Fe, Pt, and C, the sputtering target having a structure configured so that an Fe-Pt alloy phase which comprises 40-60 at.% Pt and, as the remainder, Fe and incidental impurities and a carbon phase which contains incidental impurities have been dispersed in each other, the carbon content of the whole target being 21-70 at.%. The FePt-C-based sputtering target can be produced, for example, by adding a carbon powder containing incidental impurities to an Fe-Pt alloy powder which comprises 40-60 at.% Pt and, as the remainder, Fe and incidental impurities, mixing the powders in an oxygenic atmosphere to produce a powder mixture, and thereafter heating and molding the produced powder mixture with pressurizing.

JP5646398	Film deposition equipment
JPS537584	SPUTTERING APPARATUS
JP6168716	Contact process electric supply device

MIYASHITA TAKANOBU (JP)
GOTO YASUYUKI (JP)
KUSHIBIKI RYOUSUKE (JP)
AONO MASAHIRO (JP)
NISHIURA MASAHIRO (JP)

PCT/JP2012/056726

October 04, 2012

March 15, 2012

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TANAKA PRECIOUS METAL IND (JP)
MIYASHITA TAKANOBU (JP)
GOTO YASUYUKI (JP)
KUSHIBIKI RYOUSUKE (JP)
AONO MASAHIRO (JP)
NISHIURA MASAHIRO (JP)

C23C14/34; B22F1/00; B22F9/08; C22C5/04

JP2008169464A	2008-07-24
JP2006161082A	2006-06-22
JP2003313659A	2003-11-06
JP2012102387A	2012-05-31

MATSUYAMA, Keisuke et al. (JP)
Keisuke Matsuyama (JP)

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