Title:
FERROELECTRIC-BASED THREE-DIMENSIONAL FLASH MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/033338
Kind Code:
A1
Abstract:
A ferroelectric-based three-dimensional flash memory is disclosed. By determining, from among negative range values or positive range values, a program voltage applied to a target memory cell that is a target of a program operation among a plurality of memory cells, and changing the quantity of polarized charges in a partial region of a data storage pattern corresponding to the target memory cell, the target memory cell is implemented as a multi-level cell. In addition, a vertical channel pattern is P-type because a substrate is formed to be N-type.
Inventors:
SONG YUN HEUB (KR)
Application Number:
PCT/KR2022/009871
Publication Date:
March 09, 2023
Filing Date:
July 07, 2022
Export Citation:
Assignee:
IUCF HYU (KR)
International Classes:
G11C16/04; G11C16/08; G11C16/10; G11C16/30
Foreign References:
| KR20210012648A | 2021-02-03 | |||
| US20140151774A1 | 2014-06-05 | |||
| US20140307508A1 | 2014-10-16 | |||
| JP2014053571A | 2014-03-20 | |||
| KR20200078753A | 2020-07-02 |
Attorney, Agent or Firm:
KIM, Jeong Hoon (KR)
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