Title:
FERROELECTRIC CAPACITOR, METHOD FOR THE PRODUCTION AND USE THEREOF
Document Type and Number:
WIPO Patent Application WO2002059922
Kind Code:
A3
Abstract:
The invention relates to a capacitor (1), comprising a multi-layered structure with at least two layers of electrodes (3, 4) and one ferroelectric layer (2) with ferroelectric material arranged between the layers of said electrodes. At least one of the electrode layers (4) is arranged on at least one of the insulating layers (5) made of electric insulating material which is different from ferroelectric material. The capacitor is characterised in that the electrode layer arranged on the insulating layer is disposed in a cavity (6) of the electrode layer. An electrode layer is therefore situated between the ferroelectric layer of the capacitor and an insulating layer. The electrode layer is buried. The result thereof is a simple and safe electric insulation of the electrode layers in relation to each other. At the same time, the capacitor can be produced in a more simplified manner, since the insulation material does not need to be arranged on a lateral surface of the capacitor for electrical insulation of the electrode layers. The capacitor is used as a detection element (30) in an array of detectors (31) for detecting infra red radiation (32).
Inventors:
PRIMIG ROBERT (DE)
SCHREITER MATTHIAS (DE)
PITZER DANA (DE)
BRUCHHAUS RAINER (JP)
SCHREITER MATTHIAS (DE)
PITZER DANA (DE)
BRUCHHAUS RAINER (JP)
Application Number:
PCT/DE2002/000178
Publication Date:
October 31, 2002
Filing Date:
January 21, 2002
Export Citation:
Assignee:
SIEMENS AG (DE)
PRIMIG ROBERT (DE)
SCHREITER MATTHIAS (DE)
PITZER DANA (DE)
BRUCHHAUS RAINER (JP)
PRIMIG ROBERT (DE)
SCHREITER MATTHIAS (DE)
PITZER DANA (DE)
BRUCHHAUS RAINER (JP)
International Classes:
H01L21/02; (IPC1-7): H01L21/02; H01L37/02
Domestic Patent References:
| WO2000046844A1 | 2000-08-10 |
Foreign References:
| US6130102A | 2000-10-10 | |||
| US5483067A | 1996-01-09 |
Other References:
SPIERINGS G A C ET AL: "STRESSES IN PT/PB(ZR,TI)O3/PT THIN-FILM STACKS FOR INTEGRATED FERROELECTRIC CAPACITORS", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 78, no. 3, 1 August 1995 (1995-08-01), pages 1926 - 1933, XP000541835, ISSN: 0021-8979
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