Title:
FERROELECTRIC FIELD EFFECT TRANSISTOR, FERROELECTRIC RANDOM-ACCESS MEMORY, AND MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/220962
Kind Code:
A1
Abstract:
The present application provides a ferroelectric field effect transistor, a ferroelectric random-access memory, and a manufacturing method. The ferroelectric field effect transistor comprises a silicon-based substrate, a semiconductor layer, a ferroelectric layer, and a metal gate; the semiconductor layer is provided between the silicon-based substrate and the ferroelectric layer; the material of the silicon-based substrate is different from that of the semiconductor layer; and the semiconductor layer can moderate the difference in lattice parameters and thermal expansion coefficients of the silicon-based substrate and the ferroelectric layer, such that the ferroelectric field effect transistor can achieve higher retention performance.
Inventors:
LI XIUYAN (CN)
ZHONG SHUMAN (CN)
LIU CHUANCHUAN (CN)
MA CHAO (CN)
QIN QING (CN)
ZHOU XUE (CN)
JIAO HUIFANG (CN)
ZHONG SHUMAN (CN)
LIU CHUANCHUAN (CN)
MA CHAO (CN)
QIN QING (CN)
ZHOU XUE (CN)
JIAO HUIFANG (CN)
Application Number:
PCT/CN2022/093530
Publication Date:
November 23, 2023
Filing Date:
May 18, 2022
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L29/78
Foreign References:
| CN114447223A | 2022-05-06 | |||
| CN110277410A | 2019-09-24 | |||
| CN113745327A | 2021-12-03 | |||
| CN108091693A | 2018-05-29 | |||
| JP2012004304A | 2012-01-05 |
Attorney, Agent or Firm:
LONGSUN LEAD IP LTD. (CN)
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