Title:
FERROELECTRIC FLAT PANEL DISPLAYS
Document Type and Number:
WIPO Patent Application WO1999065051
Kind Code:
A3
Abstract:
A thin film of ferroelectric layered superlattice material in a flat panel display device is energized to selectively influence the display image. In one embodiment, a voltage pulse causes the layered superlattice material to emit electrons that impinge upon a phosphor, causing the phosphor to emit light. In another embodiment, an electric potential creates a remanent polarization in the layered superlattice material, which exerts an electric field in liquid crystal layer, thereby influencing the transmissivity of light through the liquid crystal. The layered superlattice material is a metal oxide formed using an inventive liquid precursor containing an alkoxycarbolyxate. The thin film thickness is preferably in the range of 50-140 nm, so that polarizability and transparency of the thin film is enhanced. A display element may comprise a varistor device to prevent cross-talk between pixels and to enable sudden polarization switching. A functional gradient in the ferroelectric thin film enhances electron emission. Two ferroelectric elements, one on either side of the phosphor may be used to enhance luminescence. A phosphor can be sandwiched between a dielectric and a ferroelectric layer to enhance emission.
Inventors:
KANO GOTA (JP)
SHIMADA YASUHIRO (JP)
HAYASHI SHINICHIRO (JP)
ARITA KOJI (US)
PAZ DE ARAUJO CARLOS A (US)
CUCHIARO JOSEPH D (US)
MCMILLAN LARRY D (US)
SHIMADA YASUHIRO (JP)
HAYASHI SHINICHIRO (JP)
ARITA KOJI (US)
PAZ DE ARAUJO CARLOS A (US)
CUCHIARO JOSEPH D (US)
MCMILLAN LARRY D (US)
Application Number:
PCT/US1999/012717
Publication Date:
March 16, 2000
Filing Date:
June 07, 1999
Export Citation:
Assignee:
SYMETRIX CORP (US)
MATSUSHITA ELECTRONICS CORP (JP)
MATSUSHITA ELECTRONICS CORP (JP)
International Classes:
G02F1/136; G02F1/13357; G09F9/30; H01J9/02; H01J29/04; H01J31/12; (IPC1-7): H01J1/30; G02F1/136; H01J31/12
Foreign References:
| US4876481A | 1989-10-24 | |||
| US4944575A | 1990-07-31 | |||
| US4021798A | 1977-05-03 | |||
| US5453661A | 1995-09-26 | |||
| US5631664A | 1997-05-20 |
Other References:
PATENT ABSTRACTS OF JAPAN vol. 015, no. 410 (P - 1264) 18 October 1991 (1991-10-18)
T TSURUMI ET AL.: "Fabrication of barium titanate/strontium titanate artificial supperlattice by atomic layer epitaxy", JAPANESE JOURNAL OF APPLIED PHYSICS., vol. 33, no. 9b, September 1994 (1994-09-01), PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO., JP, pages 5192 - 5195, XP002116722, ISSN: 0021-4922
C-M WANG ET AL.: "The properties of lead titanate thin films derived from a diol-based sol-get-process", JAPANESE JOURNAL OF APPLIED PHYSICS., vol. 37, no. 3a, March 1998 (1998-03-01), PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO., JP, pages 951 - 957, XP002116723, ISSN: 0021-4922
PATENT ABSTRACTS OF JAPAN vol. 014, no. 296 (P - 1067) 26 June 1990 (1990-06-26)
T TSURUMI ET AL.: "Fabrication of barium titanate/strontium titanate artificial supperlattice by atomic layer epitaxy", JAPANESE JOURNAL OF APPLIED PHYSICS., vol. 33, no. 9b, September 1994 (1994-09-01), PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO., JP, pages 5192 - 5195, XP002116722, ISSN: 0021-4922
C-M WANG ET AL.: "The properties of lead titanate thin films derived from a diol-based sol-get-process", JAPANESE JOURNAL OF APPLIED PHYSICS., vol. 37, no. 3a, March 1998 (1998-03-01), PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO., JP, pages 951 - 957, XP002116723, ISSN: 0021-4922
PATENT ABSTRACTS OF JAPAN vol. 014, no. 296 (P - 1067) 26 June 1990 (1990-06-26)
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