FERROELECTRIC MEMORY, DATA READING METHOD, AND ELECTRONIC DEVICE

WIPO Patent Application WO/2023/097528

A1

Provided in embodiments of the present application are a ferroelectric memory, a data reading method, and an electronic device, enabling a reading voltage window of the ferroelectric memory to be amplified. The ferroelectric memory comprises one or a plurality of storage unit subarrays, and each storage unit subarray comprises ferroelectric storage units distributed in an array. Wherein, in the storage unit subarray, the ferroelectric storage units located in the same column are connected to the same local bit line, and the ferroelectric storage units located in the same row are connected to the same word line; the ferroelectric storage units located in the same row are further connected to the same board line; and the storage unit subarray is further provided with a row of gain units, and the ferroelectric storage units located in the same column are correspondingly provided with one gain unit. Wherein, the gain unit comprises an amplification transistor, a control terminal of the amplification transistor is connected to the local bit line to which the column of ferroelectric storage units is connected, a first terminal of the amplification transistor is connected to a global bit line, and a second terminal of the amplification transistor is connected to a source line.

ZHANG MIN (CN)
ZHANG HENG (CN)
YANG XICHAO (CN)
LV HANGBING (CN)
XU JEFFREY JUNHAO (CN)

PCT/CN2021/134668

June 08, 2023

November 30, 2021

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HUAWEI TECH CO LTD (CN)

G11C11/22

CN109643572A	2019-04-16
CN102855937A	2013-01-02
CN104205227A	2014-12-10
US20030218898A1	2003-11-27
CN1806294A	2006-07-19

BEIJING ZBSD PATENT & TRADEMARK AGENT LTD. (CN)

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