FERROELECTRIC MEMORY DEVICE AND METHOD FOR FORMING SAME

Title:

FERROELECTRIC MEMORY DEVICE AND METHOD FOR FORMING SAME

Document Type and Number:

WIPO Patent Application WO/2022/222060

Kind Code:

A1

Abstract:

A memory device includes a plurality of memory cells. Each memory cell includes at least one transistor and at least one capacitor electrically coupled to the at least one transistor. Each capacitor includes a first electrode, a second electrode surrounding at least a first portion of the first electrode, and a ferroelectric layer disposed between the first electrode and the second electrode.

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Inventors:

SUN JIANHUA (CN)
HU YUSHI (CN)
GUO MEILAN (CN)
LU ZHENYU (CN)
ZHANG WEI (CN)

Application Number:

PCT/CN2021/088675

Publication Date:

October 27, 2022

Filing Date:

April 21, 2021

Export Citation:

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Assignee:

WUXI PETABYTE TECH CO LTD (CN)

International Classes:

H01L27/11514

Foreign References:

CN112542460A	2021-03-23
CN109037219A	2018-12-18
CN101930996A	2010-12-29
US20040051176A1	2004-03-18

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