Title:
FERROELECTRIC MEMORY DEVICE, METHOD FOR MANUFACTURING SUCH FERROELECTRIC MEMORY DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2007/086126
Kind Code:
A1
Abstract:
A thin SiCH film having a thickness of 10nm or less is formed between a self-oriented film, which is formed under a lower electrode of a ferroelectric capacitor, and a conductive plug under the self-oriented film. Thus, influence of orientation of crystal grains in the conductive plug on the self-oriented film is blocked, and a problem of having a metal element in the self-oriented film not exhibiting the desired self orientation characteristics due to the influence of the metal crystal constituting the conductive plug is eliminated.
Inventors:
SASHIDA NAOYA (JP)
Application Number:
PCT/JP2006/301242
Publication Date:
August 02, 2007
Filing Date:
January 26, 2006
Export Citation:
Assignee:
FUJITSU LTD (JP)
SASHIDA NAOYA (JP)
SASHIDA NAOYA (JP)
International Classes:
H01L21/8246; H01L27/105
Foreign References:
| JP2002198496A | 2002-07-12 | |||
| JP2005347472A | 2005-12-15 |
Attorney, Agent or Firm:
ITOH, Tadahiko (Yebisu Garden Place Tower 20-3, Ebisu, 4-chom, Shibuya-ku Tokyo 32, JP)
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