FERROELECTRIC MEMORY DEVICES AND METHODS FOR FORMING THE SAME

Title:

FERROELECTRIC MEMORY DEVICES AND METHODS FOR FORMING THE SAME

Document Type and Number:

WIPO Patent Application WO/2020/258877

Kind Code:

A1

Abstract:

Embodiments of ferroelectric memory devices and methods for forming the ferroelectric memory devices are disclosed. In an example, a ferroelectric memory cell includes a first electrode, a second electrode, a doped ferroelectric layer disposed between the first electrode and the second electrode. The doped ferroelectric layer includes oxygen and one or more ferroelectric metals. The doped ferroelectric layer further includes a plurality of dopants including at least one dopant from one of Group II elements, Group III elements, or Lanthanide elements. The plurality of dopants are different from the one or more ferroelectric metals.

Inventors:

LU ZHENYU (US)

Application Number:

PCT/CN2020/072927

Publication Date:

December 30, 2020

Filing Date:

January 19, 2020

Export Citation:

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Assignee:

WUXI PETABYTE TECH CO LTD (CN)

International Classes:

H01L27/11502

Foreign References:

CN106463513A	2017-02-22
CN106463513A	2017-02-22
CN101017879A	2007-08-15
CN108520878A	2018-09-11

Other References: