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Title:
FERROELECTRIC MEMORY INTEGRATED CIRCUIT, AND OPERATION METHOD AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2019/047489
Kind Code:
A1
Abstract:
The present invention belongs to the technical field of ferroelectric memories. A ferroelectric memory integrated circuit provided in the present invention comprises: a ferroelectric memory array having a memory unit array formed on a ferroelectric single crystalline layer; each ferroelectric memory unit of the ferroelectric memory array is mainly formed by a memory unit in the memory unit array, or is formed mainly by a memory unit in the memory unit array and a transistor which is electrically connected to the memory unit and is formed on a silicon substrate of a silicon substrate reading-writing circuit.

Inventors:
JIANG, Anquan (No. 220 Handan Road, Shanghai 0, 200000, CN)
ZHANG, Yan (No. 220 Handan Road, Shanghai 0, 200000, CN)
BAI, Zilong (No. 220 Handan Road, Shanghai 0, 200000, CN)
Application Number:
CN2018/077485
Publication Date:
March 14, 2019
Filing Date:
February 28, 2018
Export Citation:
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Assignee:
FUDAN UNIVERSITY (No. 220 Handan Road, Shanghai 0, 200000, CN)
International Classes:
G11C11/22; H01L27/11502
Attorney, Agent or Firm:
CHINA PATENT AGENT (HK) LTD. (22/F. Great Eagle Center, 23 Harbour RoadWanchai, Hong Kong, Kong, CN)
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