FERROELECTRIC THIN-FILM LAMINATE SUBSTRATE, FERROELECTRIC THIN-FILM ELEMENT, AND MANUFACTURING METHOD OF FERROELECTRIC THIN-FILM LAMINATE SUBSTRATE

Title:

FERROELECTRIC THIN-FILM LAMINATE SUBSTRATE, FERROELECTRIC THIN-FILM ELEMENT, AND MANUFACTURING METHOD OF FERROELECTRIC THIN-FILM LAMINATE SUBSTRATE

Document Type and Number:

WIPO Patent Application WO/2016/152421

Kind Code:

A1

Abstract:

The purpose of the present invention is to provide a niobic acid-based ferroelectric thin-film laminate substrate which can enable a better-than-conventional bonding strength when performing wire bonding in the thin film element, and to provide a ferroelectric thin-film element cut out from said laminate substrate. This ferroelectric thin-film laminate substrate comprises, laminated in order on a substrate, a lower electrode layer, a ferroelectric thin-film layer, an upper electrode adhesion layer and an upper electrode layer, and is characterized in that the lower electrode layer comprises Pt or a Pt alloy, the ferroelectric thin-film layer comprises (K1-xNax)NbO3 (0.4 ≦ x ≦ 0.7), the upper electrode layer comprises Au, the upper electrode adhesion layer comprises a metal which is less prone to oxidation than Ti and which becomes a solid solution-type alloy without producing an intermetallic compound with Au, and part of the upper electrode adhesion layer and part of the upper electrode layer are alloyed.

Inventors:

HORIKIRI FUMIMASA (JP)
SHIBATA KENJI (JP)
WATANABE KAZUTOSHI (JP)
NOGUCHI MASAKI (JP)
SUENAGA KAZUFUMI (JP)

Application Number:

PCT/JP2016/056430

Publication Date:

September 29, 2016

Filing Date:

March 02, 2016

Export Citation:

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Assignee:

SUMITOMO CHEMICAL CO (JP)

International Classes:

H01L21/8246; H01L41/047; H01L27/105; H01L37/02; H01L41/187; H01L41/29

Foreign References:

JP2011192736A	2011-09-29
JP2015053417A	2015-03-19
JP2013225608A	2013-10-31
JP2014187094A	2014-10-02

Other References: