FIELD EFFECT NANOSIZED ELECTRICAL POTENTIAL SENSOR

WIPO Patent Application WO/2022/119471

A9

This invention relates to semiconductor electrical potential sensors. The sensor is in the form of a quartz or glass needle-shaped nanopipette comprising two longitudinal barrels which is narrowed at one of its tips to a diameter of 20 to 500 nm. The narrow tip of the nanopipette is in the form of a flat pad orthogonal to the nanopipette axis and has a sensing element in the form of sequentially deposited semiconducting material layer and protective dielectric layer which is chemically neutral to the test environment. Two measuring electrodes are connected to said semiconductor layer, said measuring electrodes being in the form of carbon layers deposited onto the inner walls of the longitudinal barrels inside the nanopipette, galvanically insulated from each other with a dielectric wall and connected to an external electrical resistivity meter. The technical result is an increase in the stability of parameters, chemical neutrality and sensitivity of the sensor.

KUBASOV ILYA VIKTOROVICH (RU)
KISLYUK ALEKSANDR MIKHAJLOVICH (RU)
TEMIROV ALEKSANDR ANATOL'EVICH (RU)
TURUTIN ANDREI VLADIMIROVICH (RU)
MALINKOVICH MIKHAIL DAVY'DOVICH (RU)
PARKHOMENKO YURIY NIKOLAEVICH (RU)
SALIKHOV SERGEJ VLADIMIROVICH (RU)
KORCHEV YURI EVGEN'EVICH (RU)
EROFEEV ALEXANDR SERGEEVICH (RU)
GORELKIN PETR VLADIMIROVICH (RU)
PRELOVSKAIA ALEKSANDRA OLEGOVNA (RU)
VANEEV ALEXANDR NIKOLAEVICH (RU)
KOLMOGOROV VASILII SERGEEVICH (RU)
TIMOSHENKO ROMAN VIKTOROVICH (RU)

PCT/RU2020/000663

July 07, 2022

December 04, 2020

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NATIONAL UNIV OF SCIENCE AND TECHNOLOGY MISIS (RU)

G01R27/22; B82Y30/00; H01L29/739

SAGITOV, Vener Ramilevich (RU)

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