FIELD-EFFECT SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

WIPO Patent Application WO/2014/185086

A1

A field-effect semiconductor device having a Ge channel and a SiGe source/drain region. The field-effect semiconductor device is provided with a semiconductor layer (10), a gate insulating film (20), a gate electrode (31), a source/drain region (60), a Ge layer (63), and a wiring layer (72). The semiconductor layer (10) includes Ge. The gate electrode (31) is provided on the semiconductor layer (10) with the gate insulating film (20) interposed therebetween. The source/drain region (60) is provided on the semiconductor layer (10) on either side of the channel region under the gate electrode (31), and comprises Sii-xGex (0