FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD

WIPO Patent Application WO/2019/014901

A1

A field effect transistor and a manufacturing method, wherein same belong to the technical field of electronics. The field effect transistor comprises: a substrate layer (201); a first back gate electrode (202) and a second back gate electrode (203) arranged above the substrate layer (201); a back gate insulation layer (204) covering the substrate layer (201), and the first back gate electrode (202) and the second back gate electrode (203); a semiconductor layer (205) covering the back gate insulation layer (204); a top gate insulation layer (206) covering the semiconductor layer (205); a drain electrode (207) and a source electrode (208) arranged above the back gate insulation layer (204), with a part of the drain electrode (207) covering a first edge of the semiconductor layer (205), and a part of the source electrode (208) covering a second edge of the semiconductor layer (205); and a first top gate electrode (209) and a second top gate electrode (210) arranged above the top gate insulation layer (206), wherein the drain electrode (207) is electrically connected to the second top gate electrode (210). The field effect transistor has a high peak current, a small chip-occupied area, and an uncomplicated manufacturing process, and can realize large-area and low-cost manufacturing.

XIAO XIANG (CN)
XU HUILONG (CN)
ZHANG CHEN-XIONG (CN)

PCT/CN2017/093730

January 24, 2019

July 20, 2017

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HUAWEI TECH CO LTD (CN)

H01L21/00; H01L27/105; H01L29/78

CN103329244A	2013-09-25
CN104218089A	2014-12-17
CN104241378A	2014-12-24
CN102054869A	2011-05-11

BEIJING SAN GAO YONG XIN INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)

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