Title:
FIELD EFFECT TRANSISTOR AND MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/138941
Kind Code:
A1
Abstract:
Disclosed is a field effect transistor, comprising a channel layer, a gate electrode layer, and a gate insulator layer. The gate insulator layer is made from a ferroelectric layer, and is divided into two regions: a first region for information storage, having a prescribed first coercive voltage (Vc1), and a second region for information read/write, having a layer with a different thickness from the first region. An on voltage (Von) and an off voltage (Voff) for controlling the information and read/write, and the first coercive voltage (Vc1), satisfy the relation -Vc1 < Voff < Von < Vc1. A single field effect transistor has the information storage function and the information read/write function therein. When the disclosed field effect transistor is employed as a memory cell in a NAND memory device, the problems of read disturb and write disturb do not arise. Additionally, the disclosed field effect transistor is effective with respect to achieving large-scale integration.
Inventors:
MIYASAKO, Takaaki (Salvia Garden 307-gou, 579-3 Yatsuya-chou, Hakusan-sh, Ishikawa 82, 〒9240882, JP)
宮迫 毅明 (〒82 石川県白山市八ツ矢町５７９－３ サルビアガーデン３０７号 Ishikawa, 〒9240882, JP)
TOKUMITSU, Eisuke (2-17-50-1702, Akasaka Minato-k, Tokyo 52, 〒1070052, JP)
宮迫 毅明 (〒82 石川県白山市八ツ矢町５７９－３ サルビアガーデン３０７号 Ishikawa, 〒9240882, JP)
TOKUMITSU, Eisuke (2-17-50-1702, Akasaka Minato-k, Tokyo 52, 〒1070052, JP)
Application Number:
JP2011/060521
Publication Date:
November 10, 2011
Filing Date:
May 02, 2011
Export Citation:
Assignee:
JAPAN SCIENCE AND TECHNOLOGY AGENCY (1-8 Honcho 4-chome, Kawaguchi-shi Saitama, 12, 〒3320012, JP)
独立行政法人科学技術振興機構 (〒12 埼玉県川口市本町四丁目１番８号 Saitama, 〒3320012, JP)
MIYASAKO, Takaaki (Salvia Garden 307-gou, 579-3 Yatsuya-chou, Hakusan-sh, Ishikawa 82, 〒9240882, JP)
宮迫 毅明 (〒82 石川県白山市八ツ矢町５７９－３ サルビアガーデン３０７号 Ishikawa, 〒9240882, JP)
独立行政法人科学技術振興機構 (〒12 埼玉県川口市本町四丁目１番８号 Saitama, 〒3320012, JP)
MIYASAKO, Takaaki (Salvia Garden 307-gou, 579-3 Yatsuya-chou, Hakusan-sh, Ishikawa 82, 〒9240882, JP)
宮迫 毅明 (〒82 石川県白山市八ツ矢町５７９－３ サルビアガーデン３０７号 Ishikawa, 〒9240882, JP)
International Classes:
H01L21/8246; G11C11/22; H01L27/105
Attorney, Agent or Firm:
MATSUO, Nobutaka (MEBUKI Intellectual Property Services, 9862-60 Ochiai, Fujimi-machi, Suwa-gu, Nagano 14, 〒3990214, JP)
Claims: