Title:
FIELD-EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THEREOF
Document Type and Number:
WIPO Patent Application WO/2013/073315
Kind Code:
A1
Abstract:
According to a GaN type HFET according to the present invention, the resistivity (ρ) of a semi-insulating film that constitutes a gate insulation film (17) is 3.9 × 109 Ωcm. The value of this resistivity (ρ) is a value derived when the current density is 6.25 × 10-4 (A/cm2). A withstanding voltage of 1,000 V can be obtained by providing the gate insulation film (17) constituted by the semi-insulating film having a resistivity (ρ) of 3.9 × 109 Ωcm. As indicated in Fig. 3, the withstanding voltage suddenly drops when the resistivity of the gate insulation film exceeds 1 × 1011 Ωcm, and the gate leak current increases when the resistivity of the gate insulation film drops below 1 × 107 Ωcm.
Inventors:
NAGAHISA TETSUZO
HANDA SHINICHI
HANDA SHINICHI
Application Number:
PCT/JP2012/076033
Publication Date:
May 23, 2013
Filing Date:
October 05, 2012
Export Citation:
Assignee:
SHARP KK (JP)
NAGAHISA TETSUZO
HANDA SHINICHI
NAGAHISA TETSUZO
HANDA SHINICHI
International Classes:
H01L21/338; H01L21/28; H01L21/283; H01L21/318; H01L21/336; H01L29/423; H01L29/49; H01L29/778; H01L29/78; H01L29/812
Domestic Patent References:
| WO2009116283A1 | 2009-09-24 |
Foreign References:
| JP2009302435A | 2009-12-24 | |||
| JP2007294528A | 2007-11-08 |
Attorney, Agent or Firm:
SAMEJIMA, Mutsumi et al. (JP)
Mutsumi Sameshima (JP)
Mutsumi Sameshima (JP)
Download PDF:
Claims: