Title:
FIELD-EFFECT TRANSISTOR, METHOD FOR PRODUCING SAME, DISPLAY ELEMENT, DISPLAY DEVICE, AND SYSTEM
Document Type and Number:
WIPO Patent Application WO/2018/169024
Kind Code:
A1
Abstract:
(Object) To miniaturize a field-effect transistor. (Means of Achieving the Object) A field-effect transistor includes a semiconductor film formed on a base, a gate insulating film formed on a part of the semiconductor film, a gate electrode formed on the gate insulating film, and a source electrode and a drain electrode formed in contact with the semiconductor film, wherein a thickness of the source electrode and the drain electrode is smaller than a thickness of the gate insulating film, and the gate insulating film includes a region that is not in contact with the source electrode or the drain electrode.
More Like This:
Inventors:
ARAE SADANORI (JP)
ANDO YUICHI (JP)
NAKAMURA YUKI (JP)
ABE YUKIKO (JP)
MATSUMOTO SHINJI (JP)
SONE YUJI (JP)
UEDA NAOYUKI (JP)
SAOTOME RYOICHI (JP)
KUSAYANAGI MINEHIDE (JP)
ANDO YUICHI (JP)
NAKAMURA YUKI (JP)
ABE YUKIKO (JP)
MATSUMOTO SHINJI (JP)
SONE YUJI (JP)
UEDA NAOYUKI (JP)
SAOTOME RYOICHI (JP)
KUSAYANAGI MINEHIDE (JP)
Application Number:
PCT/JP2018/010350
Publication Date:
September 20, 2018
Filing Date:
March 15, 2018
Export Citation:
Assignee:
RICOH CO LTD (JP)
ARAE SADANORI (JP)
ANDO YUICHI (JP)
NAKAMURA YUKI (JP)
ABE YUKIKO (JP)
MATSUMOTO SHINJI (JP)
SONE YUJI (JP)
UEDA NAOYUKI (JP)
SAOTOME RYOICHI (JP)
KUSAYANAGI MINEHIDE (JP)
ARAE SADANORI (JP)
ANDO YUICHI (JP)
NAKAMURA YUKI (JP)
ABE YUKIKO (JP)
MATSUMOTO SHINJI (JP)
SONE YUJI (JP)
UEDA NAOYUKI (JP)
SAOTOME RYOICHI (JP)
KUSAYANAGI MINEHIDE (JP)
International Classes:
H01L29/423; H01L29/417; H01L29/66
Foreign References:
| US20090294768A1 | 2009-12-03 | |||
| US20120181506A1 | 2012-07-19 | |||
| CN105870169A | 2016-08-17 | |||
| US20120056161A1 | 2012-03-08 | |||
| JP2013175710A | 2013-09-05 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
Download PDF: