Title:
FIELD EFFECT TRANSISTOR AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2023/095237
Kind Code:
A1
Abstract:
According to the present invention, a buffer layer (102) is formed in a substrate (101); a barrier layer (103) that is configured from a nitride semiconductor is formed on the buffer layer (102) so that the main surface of the barrier layer (103) has an N polarity (group V polarity); a channel layer (104) that is configured from a nitride semiconductor is subsequently formed on the barrier layer (103) so that the main surface of the channel layer (104) has an N polarity; an arsenide layer (122) is formed by subjecting a part of the channel layer (104) in the thickness direction in an electrode formation region (151) to arsenide conversion; and subsequently, the thus-formed arsenide layer (122) is removed by heating.
Inventors:
YOSHIYA YUKI (JP)
HOSHI TAKUYA (JP)
SUGIYAMA HIROKI (JP)
MATSUZAKI HIDEAKI (JP)
HOSHI TAKUYA (JP)
SUGIYAMA HIROKI (JP)
MATSUZAKI HIDEAKI (JP)
Application Number:
PCT/JP2021/043160
Publication Date:
June 01, 2023
Filing Date:
November 25, 2021
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
H01L29/778; H01L21/338; H01L29/812
Foreign References:
| JP2019021873A | 2019-02-07 | |||
| JP2020088258A | 2020-06-04 | |||
| JP2020115525A | 2020-07-30 | |||
| JP2012248563A | 2012-12-13 |
Attorney, Agent or Firm:
YAMAKAWA, Shigeki et al. (JP)
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