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Patent Searching and Data


Title:
FIELD-EFFECT TRANSISTOR AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2019/006832
Kind Code:
A1
Abstract:
A field-effect transistor and a preparation method therefor. By means of the method, a solution method is used to prepare an active layer (105, 205, 303) in the field-effect transistor by using black phosphorus nano-sheets or black phosphorus quantum dots as the material; the preparation process is simple; the production cost is reduced; the preparation material of the field effect transistor is enriched; the environmental pollution and dependence on metallic elements are reduced; in addition, carbon materials, such as graphene and carbon nano-material, are used to prepare source pattern layer (106, 206, 304), drain pattern layer (107, 207, 305), and top gate pattern layer (210, 307), so that effective ohmic contact with a black phosphorus active layer (105, 205, 303) can be formed; and the contact resistance can be reduced.

Inventors:
XIE HUAFEI (CN)
Application Number:
PCT/CN2017/098256
Publication Date:
January 10, 2019
Filing Date:
August 21, 2017
Export Citation:
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Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (CN)
International Classes:
H01L21/34; H01L29/24; H01L29/786
Foreign References:
CN103787325A2014-05-14
KR20160145903A2016-12-21
CN105428416A2016-03-23
Other References:
KIM, J.S. ET AL.: "Dual Gate Black Phosphorus Field Effect Transistors on Glass for NOR Logic and Organic Light Emitting Diode Switching", NANO LETTERS, vol. 15, 14 August 2015 (2015-08-14), pages 5778 - 5783, XP055562518
BRENT, J.R. ET AL.: "Production of Few-Layer Phosphorene by Liquid Exfoliation of Black Phosphorus", CHEM. COMMUN., vol. 50, 8 September 2014 (2014-09-08), pages 13339, XP055562519
Attorney, Agent or Firm:
CHINA WISPRO INTELLECTUAL PROPERTY LLP. (CN)
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