Title:
FIELD EFFECT TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2012/014352
Kind Code:
A1
Abstract:
A first semiconductor layer (103) includes a low-carbon-concentration region having a carbon concentration of less than 1×1017 cm-3 at least in a region under an end portion of a gate electrode (106) on the side of a drain electrode (107). The relationship of Vm/(110·d1)≤d2
Inventors:
WAKITA, Naohide (())
脇田尚英 (())
TANAKA, Kenichiro (())
田中健一郎 (())
ISHIDA, Masahiro (())
脇田尚英 (())
TANAKA, Kenichiro (())
田中健一郎 (())
ISHIDA, Masahiro (())
Application Number:
JP2011/002260
Publication Date:
February 02, 2012
Filing Date:
April 18, 2011
Export Citation:
Assignee:
PANASONIC CORPORATION (1006, Oaza Kadoma Kadoma-sh, Osaka 01, 〒5718501, JP)
パナソニック株式会社 (〒01 大阪府門真市大字門真１００６番地 Osaka, 〒5718501, JP)
WAKITA, Naohide (())
脇田尚英 (())
TANAKA, Kenichiro (())
田中健一郎 (())
パナソニック株式会社 (〒01 大阪府門真市大字門真１００６番地 Osaka, 〒5718501, JP)
WAKITA, Naohide (())
脇田尚英 (())
TANAKA, Kenichiro (())
田中健一郎 (())
International Classes:
H01L21/338; H01L21/205; H01L29/06; H01L29/778; H01L29/812
Attorney, Agent or Firm:
MAEDA, Hiroshi et al. (Osaka-Marubeni Bldg, 5-7Hommachi 2-chome,Chuo-ku, Osaka-shi, Osaka 53, 〒5410053, JP)
Claims: