Title:
FIELD EFFECT TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2012/014352
Kind Code:
A1
Abstract:
A first semiconductor layer (103) includes a low-carbon-concentration region having a carbon concentration of less than 1×1017 cm-3 at least in a region under an end portion of a gate electrode (106) on the side of a drain electrode (107). The relationship of Vm/(110·d1)≤d2
Inventors:
WAKITA NAOHIDE
TANAKA KENICHIRO
ISHIDA MASAHIRO
TAMURA SATOSHI
SHIBATA DAISUKE
TANAKA KENICHIRO
ISHIDA MASAHIRO
TAMURA SATOSHI
SHIBATA DAISUKE
Application Number:
PCT/JP2011/002260
Publication Date:
February 02, 2012
Filing Date:
April 18, 2011
Export Citation:
Assignee:
PANASONIC CORP (JP)
WAKITA NAOHIDE
TANAKA KENICHIRO
ISHIDA MASAHIRO
TAMURA SATOSHI
SHIBATA DAISUKE
WAKITA NAOHIDE
TANAKA KENICHIRO
ISHIDA MASAHIRO
TAMURA SATOSHI
SHIBATA DAISUKE
International Classes:
H01L21/338; H01L21/205; H01L29/06; H01L29/778; H01L29/812
Foreign References:
| JP2006147663A | 2006-06-08 | |||
| JP2006332367A | 2006-12-07 | |||
| JP2007251144A | 2007-09-27 | |||
| JP2010245504A | 2010-10-28 | |||
| JP2011082494A | 2011-04-21 |
Attorney, Agent or Firm:
MAEDA, Hiroshi et al. (JP)
Hiroshi Maeda (JP)
Hiroshi Maeda (JP)
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Claims: