Title:
FIELD-EFFECT TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2014/073295
Kind Code:
A1
Abstract:
This field-effect transistor is provided with: a source electrode pad (16), which is formed on a source electrode (38), and which is electrically connected to the source electrode (38); and/or a drain electrode pad (15), which is formed on the drain electrode (37), and which is electrically connected to the drain electrode (37). The source electrode pad (16) has cutouts (504, 505) for reducing a parasitic capacitance between the source electrode pad and the drain electrode (37), and the drain electrode pad (15, 65, 115) has cutouts (501, 502) for reducing a parasitic capacitance between the drain electrode pad and the source electrode (38, 88, 138).
Inventors:
SUZUKI TAKAMITSU
ANDOH TAKAHIKO
MORISHITA SATOSHI
ANDOH TAKAHIKO
MORISHITA SATOSHI
Application Number:
PCT/JP2013/076853
Publication Date:
May 15, 2014
Filing Date:
October 02, 2013
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
H01L21/338; H01L21/28; H01L21/336; H01L21/822; H01L21/8236; H01L27/04; H01L27/088; H01L29/41; H01L29/417; H01L29/778; H01L29/78; H01L29/812
Foreign References:
| JP2010103158A | 2010-05-06 | |||
| JPH0964063A | 1997-03-07 | |||
| JP2000049169A | 2000-02-18 | |||
| JP2003282625A | 2003-10-03 | |||
| JP2006351691A | 2006-12-28 | |||
| JPH05190574A | 1993-07-30 |
Attorney, Agent or Firm:
SAMEJIMA, Mutsumi et al. (JP)
Mutsumi Sameshima (JP)
Mutsumi Sameshima (JP)
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