FIELD ELECTRON EMISSION DEVICE AND ITS MANUFACTURING METHOD

WIPO Patent Application WO/2002/017344

A1

A method for manufacturing a high-performance field electron emission device which can sufficiently hold electron emission characteristics intrinsic to a carbon nano tube (CNT) that it shows a large-current density at a low threshold value by preventing damages on the CNT occurring during the manufacturing process. This method of manufacturing the electron emission device comprises the step of protection film formation for forming an aluminum film (4) as a protection film over the surface of a CNT film (2) during the manufacturing process for at least a part of the field electron emission device comprising the CNT as the electron source. A CNT surface structure (fine structure 3) which greatly influences the electron emission characteristics is protected with the conductive protection film (aluminum film 4), so that the electron emission characteristics intrinsic to the CNT can be sufficiently secured and exhibited.

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Konuma, Kazuo (NEC Corporation 7-1, Shiba 5-chome Minato-ku, Tokyo, 108-8001, JP)

PCT/JP2001/007272

February 28, 2002

August 24, 2001

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NEC CORPORATION (7-1 Shiba 5-chome Minato-ku, Tokyo, Tokyo, 108-8001, JP)
Tomihari, Yoshinori (NEC Corporation 7-1, Shiba 5-chome Minato-ku, Tokyo, 108-8001, JP)
Okada, Yuko (NEC Corporation 7-1, Shiba 5-chome Minato-ku, Tokyo, 108-8001, JP)
Konuma, Kazuo (NEC Corporation 7-1, Shiba 5-chome Minato-ku, Tokyo, 108-8001, JP)

H01J1/304; H01J9/02; (IPC1-7): H01J9/02; H01J1/304

Ikeda, Noriyasu (The 3rd Mori Building 4-10, Nishishinbashi 1-chome Minato-ku, Tokyo, 105-0003, JP)

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