Title:
FIELD EMISSION DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/027028
Kind Code:
A1
Abstract:
Disclosed is a manufacturing method for a field emission device, comprising: forming a primary epitaxial layer on a substrate; forming a plurality of secondary epitaxial structures on the primary epitaxial layer; on the primary epitaxial layer, forming an emitter electrode layer and a dielectric layer located between the emitter electrode layer and the plurality of secondary epitaxial structures; on the dielectric layer and the plurality of secondary epitaxial structures, sequentially forming a protective layer, an insulating layer, a gate electrode layer, and a planarization layer that are stacked; etching the planarization layer to expose part of the gate electrode layer on the dielectric layer and some of the secondary epitaxial structures; etching to remove the protective layer, the insulating layer, and the exposed part of the gate electrode layer on some of the secondary epitaxial structures to expose some of the secondary epitaxial structures; forming a gate connection electrode layer on the exposed gate electrode layer on the dielectric layer; and forming an anode opposite to the exposed secondary epitaxial structures, wherein a predetermined distance is formed between the anode and the exposed secondary epitaxial structures. Further disclosed is a field emission device.
Inventors:
SHEN WENCHAO (CN)
ZHANG XIAODONG (CN)
WEI XING (CN)
TANG WENXIN (CN)
ZHOU JIAAN (CN)
ZHANG BAOSHUN (CN)
ZHANG XIAODONG (CN)
WEI XING (CN)
TANG WENXIN (CN)
ZHOU JIAAN (CN)
ZHANG BAOSHUN (CN)
Application Number:
PCT/CN2022/128615
Publication Date:
February 08, 2024
Filing Date:
October 31, 2022
Export Citation:
Assignee:
SUZHOU INST NANO TECH & NANO BIONICS SINANO CAS (CN)
International Classes:
H01J9/02
Foreign References:
| US20030104643A1 | 2003-06-05 | |||
| CN109767961A | 2019-05-17 | |||
| CN1433010A | 2003-07-30 | |||
| CN114334582A | 2022-04-12 | |||
| CN216250739U | 2022-04-08 |
Other References:
GIUBILEO FILIPPO; PASSACANTANDO MAURIZIO; ZHONG YUN; ZHAO SONGRUI; DI BARTOLOMEO ANTONIO: "Field emission properties of molecular beam epitaxy grown AlGaN nanowires", 2020 IEEE 20TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), IEEE, 29 July 2020 (2020-07-29), pages 271 - 275, XP033817441, DOI: 10.1109/NANO47656.2020.9183704
Attorney, Agent or Firm:
MING&YUE INTELLECTUAL PROPERTY LAW FIRM (CN)
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