Title:
FIELD EMISSION DEVICE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2015/176596
Kind Code:
A1
Abstract:
A field emission device comprises a substrate (110), a buffer layer (120) arranged on the substrate (110), an emitter layer (130) and a collector layer (140) respectively arranged on two ends of the buffer layer (120), and metal electrode layers (151) and (152) respectively arranged on the emitter layer (130) and the collector layer (140). A channel (160) is provided between the emitter layer (130) and the collector layer (140). A method for preparing the field emission device. With the field emission device and the preparation method, the field enhancement factor can be improved, and the field emission performance can be improved.
Inventors:
ZHAO DESHENG (CN)
ZHANG BAOSHUN (CN)
ZHANG BAOSHUN (CN)
Application Number:
PCT/CN2015/077778
Publication Date:
November 26, 2015
Filing Date:
April 29, 2015
Export Citation:
Assignee:
SUZHOU INST NANO TECH & NANO B (CN)
International Classes:
H01J1/304
Foreign References:
| US20080315775A1 | 2008-12-25 | |||
| EP1329928A2 | 2003-07-23 | |||
| US5112436A | 1992-05-12 |
Other References:
ZHANG, JING ET AL.: "High Breakdown Voltage Enhancement-mode AIGaN/GaN HFET Device Based on Energy Band Modulation Model", RESEARCH & PROGRESS OF SSE SOLID STATE ELECTRONICS, vol. 32, no. 6, 31 December 2012 (2012-12-31), pages 525, ISSN: 1000-3819
Attorney, Agent or Firm:
NANJING LI&FENG INTELLECTUAL PROPERTY AGENCY (SPECIAL GENERAL PARTNERSHIP) (CN)
南京利丰知识产权代理事务所（特殊普通合伙） (CN)
南京利丰知识产权代理事务所（特殊普通合伙） (CN)
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