FIELD EMISSION SOURCE ARRAY, METHOD FOR PRODUCING THE SAME, AND ITS USE

Title:

FIELD EMISSION SOURCE ARRAY, METHOD FOR PRODUCING THE SAME, AND ITS USE

Document Type and Number:

WIPO Patent Application WO/2000/013197

Kind Code:

A1

Abstract:

A field emission source (10) comprises a p-type silicon substrate (1), an n-type region (8) formed into stripes in a major surface of the substrate (1), strong-field drift layers (6) which are formed on the n-type region (8) in which electrons injected from the n-type region (8) drift, and which are made of oxidized porous polysilicon, a polysilicon layer (3) formed between the strong field drift layers (6), surface electrodes (7) formed into stripes in a direction perpendicular to the stripes of the n-type region (8). A voltage is selectively applied to either the n-type region (8) or the surface electrodes (7) so as to emit electrons from predetermined areas of the surface electrodes (7).

Inventors:

HATAI TAKASHI
KOMODA TAKUYA
HONDA YOSHIAKI
AIZAWA KOICHI
WATABE YOSHIFUMI
ICHIHARA TSUTOMU
KONDO YUKIHIRO
OKA NAOMASA
KOSHIDA NOBUYOSHI

Application Number:

PCT/JP1999/004613

Publication Date:

March 09, 2000

Filing Date:

August 26, 1999

Export Citation:

Click for automatic bibliography generation Help

Assignee:

MATSUSHITA ELECTRIC WORKS LTD (JP)

International Classes:

H01J1/312; H01J9/02; H01J31/12; (IPC1-7): H01J1/30; H01J9/02; H01J29/04; H01J31/12

Foreign References:

JPH09259795A	1997-10-03
JPH08111166A	1996-04-30
JPH06140502A	1994-05-20
JPH0992130A	1997-04-04

Other References: