Title:
FILM BULK ACOUSTIC RESONATOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/189965
Kind Code:
A1
Abstract:
A film bulk acoustic resonator and a manufacturing method therefor. The film bulk acoustic resonator comprises: a bearing substrate, the bearing substrate comprising a first semiconductor layer (100A) and a first device layer (100B); a first micro device (1000), the first micro device (1000) being embedded in the bearing substrate, and at least a part of the first micro device (1000) being located in the first device layer (100B); a dielectric layer (102), bonded onto the first device layer (100B), the dielectric layer (102) encloses to form a first cavity (110a), the first cavity (110a) exposing from the surface of the bearing substrate; a piezoelectric lamination structure, covering the first cavity (110a), the piezoelectric lamination structure comprising, from bottom to top, a first electrode (103), a piezoelectric layer (104) and a second electrode (105) stacked sequentially; the first cavity (110a) being formed before the piezoelectric lamination structure and located below the piezoelectric lamination structure; and a first electrical connection structure, being connected to the first micro device (1000) and electrically leading out the first micro device (1000).
Inventors:
HUANG HERB HE (CN)
LUO HAILONG (CN)
LI WEI (CN)
LUO HAILONG (CN)
LI WEI (CN)
Application Number:
PCT/CN2020/135672
Publication Date:
September 30, 2021
Filing Date:
December 11, 2020
Export Citation:
Assignee:
NINGBO SEMICONDUCTOR INT CORP (CN)
International Classes:
H03H9/17; H03H9/02
Foreign References:
| CN112039484A | 2020-12-04 | |||
| US20180358406A1 | 2018-12-13 | |||
| CN110474616A | 2019-11-19 | |||
| US20130147319A1 | 2013-06-13 | |||
| CN109412549A | 2019-03-01 |
Attorney, Agent or Firm:
BEIJING SICHUANG DACHENG INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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