Title:
FILM BULK ACOUSTIC RESONATOR AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2021/012916
Kind Code:
A1
Abstract:
Disclosed are a film bulk acoustic resonator and a method for manufacturing same. The film bulk acoustic resonator comprises: a first substrate (100); a supporting layer (101) bonded to the first substrate (100); a first cavity (110a) formed in the supporting layer (101); a piezoelectric laminated structure (120) located on the supporting layer (101); a first trench (130a) and a second trench (130b) which are formed in the piezoelectric laminated structure (120); a dielectric layer (106) on the piezoelectric laminated structure (120); a second cavity (110b) formed in the dielectric layer (106); the first trench (130a) being in communication with the first cavity (110a), and the second trench (130b) being in communication with the second cavity (110b); and a second substrate (200) covering the second cavity (110b). A trench structure effectively blocks transmission of transverse waves from an effective working area and ameliorates acoustic wave loss, such that the quality factor of the film bulk acoustic resonator is improved; in addition, the film bulk acoustic resonator with an upper packaging cover structure effectively solves the problem of various layer exposed in an upper space being polluted by an external environment, thereby improving the overall performance of the device.
Inventors:
SUI HUAN (CN)
QI FEI (CN)
YANG GUOHUANG (CN)
QI FEI (CN)
YANG GUOHUANG (CN)
Application Number:
PCT/CN2020/099645
Publication Date:
January 28, 2021
Filing Date:
July 01, 2020
Export Citation:
Assignee:
NINGBO SEMICONDUCTOR INT CORP (CN)
International Classes:
H03H9/17
Foreign References:
| CN106849897A | 2017-06-13 | |||
| CN108075743A | 2018-05-25 | |||
| CN108667437A | 2018-10-16 | |||
| JP2010041153A | 2010-02-18 |
Attorney, Agent or Firm:
BEIJING SICHUANG DACHENG INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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