Title:
FILM DEPOSITION DEVICE AND FILM DEPOSITION METHOD
Document Type and Number:
WIPO Patent Application WO/2022/070922
Kind Code:
A1
Abstract:
Provided are a film deposition device and a film deposition method by which a GaN film can be deposited with high productivity. A film deposition device 1 according to an embodiment of the present invention has: a GaN film deposition processing unit 40A which has a chamber 20 the interior of which can be evacuated, a rotary table 31 disposed inside the chamber 20, holding workpieces 10, and conveying the workpieces 10 in a circulating manner along a circumferential track, a target made of a GaN-containing film deposition material, and a plasma generator for generating plasma of a sputtering gas G1 introduced between the target and the rotary table, and which causes particles of a film deposition material containing GaN and Ga to be deposited by means of sputtering onto the workpieces 10 being conveyed in the circulating manner by the rotary table 31; and a nitriding processing unit 50 which nitrides the particles of the film deposition material deposited by the GaN film deposition processing unit 40A onto the workpieces 10 being conveyed in the circulating manner by the rotary table 31.
Inventors:
MATSUNAKA SHIGEKI (JP)
FUJITA ATSUSHI (JP)
FUJITA ATSUSHI (JP)
Application Number:
PCT/JP2021/033945
Publication Date:
April 07, 2022
Filing Date:
September 15, 2021
Export Citation:
Assignee:
SHIBAURA MECHATRONICS CORP (JP)
International Classes:
C23C14/06; H01L21/203
Domestic Patent References:
| WO2016009577A1 | 2016-01-21 |
Foreign References:
| JP2013125851A | 2013-06-24 | |||
| JP2009124100A | 2009-06-04 |
Attorney, Agent or Firm:
KIUCHI, Mitsuharu et al. (JP)
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