FILM DEPOSITION METHOD

WIPO Patent Application WO/2019/039070

A1

The purpose of the present invention is to provide a film deposition method by which it is possible to achieve high yield deposition of oxide or nitride films when the target used is an oxide or nitride containing at least one element selected from among metallic elements and metalloid elements as a constituent element, without having to rely on an RF sputtering method. Here, an oxide or nitride containing at least one element selected from among metallic elements and metalloid elements as a constituent element is used as a target, and the target is sputtered in a vacuum atmosphere so that an oxide film or nitride film having a high resistance value is deposited on a substrate surface. Multiple sheets of the target having the same composition are juxtaposed in the same plane, and AC power at a predetermined frequency is applied between paired targets among the juxtaposed targets with the targets being alternately switched between an anode electrode and a cathode electrode so that plasma is generated between the targets, and the target serving as the cathode electrode is sputtered.

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AKAMATSU YASUHIKO (JP)
TAKAHASHI RITSUO (JP)

PCT/JP2018/024019

February 28, 2019

June 25, 2018

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ULVAC INC (JP)

C23C14/34

WO2011152482A1	2011-12-08
WO2012108150A1	2012-08-16

JP2013144840A	2013-07-25
JPH07258841A	1995-10-09
JP2008240110A	2008-10-09
JP2007070715A	2007-03-22

ULVAC TECHNICAL JOURNAL, 2006, pages 23 - 27

SEIGA PATENT AND TRADEMARK CORPORATION (JP)

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