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Title:
FILM DEPOSITION METHOD
Document Type and Number:
WIPO Patent Application WO/2020/044730
Kind Code:
A1
Abstract:
The present invention pertains to a film deposition method for depositing a film by heat-treating a mist in a film deposition section, the method comprising: a step for generating a mist in a misting section by misting a raw material solution; a step for delivering the mist, by means of a carrier gas, from the misting section to the film deposition section via a delivery section that connects the misting section and the film deposition section; and a step for depositing a film on a substrate by applying a heat treatment to the mist in the film deposition section, wherein control is performed on the temperature and flow rate of the carrier gas so as to satisfy 7

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Inventors:
WATABE TAKENORI (JP)
HASHIGAMI HIROSHI (JP)
Application Number:
PCT/JP2019/023396
Publication Date:
March 05, 2020
Filing Date:
June 13, 2019
Export Citation:
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Assignee:
SHINETSU CHEMICAL CO (JP)
International Classes:
C23C16/455; C23C16/40; C23C16/448
Foreign References:
JP2016145388A2016-08-12
JP2016146442A2016-08-12
JP2015070248A2015-04-13
JP2018178229A2018-11-15
JPH01257337A1989-10-13
JP2005307238A2005-11-04
JP2012046772A2012-03-08
JP5397794B12014-01-22
JP2014063973A2014-04-10
Other References:
See also references of EP 3845684A4
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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