Title:
FILM-FORMABLE MATERIAL FOR RESIST PROCESSING USE AND PATTERN FORMATION METHOD
Document Type and Number:
WIPO Patent Application WO/2017/169487
Kind Code:
A1
Abstract:
Provided are: a film-formable material for resist processing use, which makes it possible to form a silicon-containing film that has both of an excellent ability to be etched easily with a CF4 gas and excellent etching resistance against an oxygen gas or a silicon-containing film that has a good balance between the releasability with an acidic solution, the ability of being etched easily with a CF4 gas and the etching resistance against an oxygen gas; and a pattern formation method using the film-formable material. The film-formable material for resist processing use according to the present invention comprises: a siloxane polymer component containing at least two atoms selected from the group consisting of a sulfur atom, a nitrogen atom, a boron atom and a phosphorus atom; and an organic solvent. The pattern formation method according to the present invention comprises: a step of applying the film-formable material for resist processing use onto a substrate to form a silicon-containing film; a step of forming a pattern using the silicon-containing film as a mask; and others.
Inventors:
SUZUKI JUNYA (JP)
SEKO TOMOAKI (JP)
ANNO YUUSUKE (JP)
SEKO TOMOAKI (JP)
ANNO YUUSUKE (JP)
Application Number:
PCT/JP2017/008113
Publication Date:
October 05, 2017
Filing Date:
March 01, 2017
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
G03F7/11; G03F7/20; G03F7/26; H01L21/027
Domestic Patent References:
| WO2016009939A1 | 2016-01-21 |
Foreign References:
| JP5534250B2 | 2014-06-25 | |||
| JP5621982B2 | 2014-11-12 | |||
| JP2013129649A | 2013-07-04 | |||
| JP2005352110A | 2005-12-22 | |||
| JP2005173552A | 2005-06-30 | |||
| JP2010160455A | 2010-07-22 |
Attorney, Agent or Firm:
AMANO Kazunori (JP)
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