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Title:
FILM FORMATION MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FILM FORMATION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMATION METHOD
Document Type and Number:
WIPO Patent Application WO/2020/039966
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing a film formation material and the like for lithography, which are useful for forming a photoresist underlayer film to which a wet process is applicable, and which has excellent heat resistance, etching resistance, ability to be embedded in a multilevel substrate, and film flatness. The problem can be solved by the following film formation material for lithography. This film formation material for lithography contains: a compound having a group represented formula (0A) (in formula (0A), RA represents a hydrogen atom or an alkyl group having 1-4 carbon atoms, and RB represents an alkyl group having 1-4 carbon atoms); and a compound having a group represented by formula (0B).

Inventors:
HORIUCHI JUNYA (JP)
UENO MASAYOSHI (JP)
YAMADA KOUICHI (JP)
MAKINOSHIMA TAKASHI (JP)
ECHIGO MASATOSHI (JP)
Application Number:
PCT/JP2019/031399
Publication Date:
February 27, 2020
Filing Date:
August 08, 2019
Export Citation:
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Assignee:
MITSUBISHI GAS CHEMICAL CO (JP)
International Classes:
G03F7/11; C08G73/06; G03F7/004; G03F7/039; G03F7/40; H01L21/027; H01L21/3065
Domestic Patent References:
WO2009072465A12009-06-11
WO2011034062A12011-03-24
WO2004066377A12004-08-05
WO2018016614A12018-01-25
WO2011108524A12011-09-09
WO2004009708A12004-01-29
WO2015080240A12015-06-04
WO2013024779A12013-02-21
Foreign References:
JP2010519340A2010-06-03
JPH11258802A1999-09-24
JPH03185015A1991-08-13
JP2004177668A2004-06-24
JP2004271838A2004-09-30
JP2005250434A2005-09-15
JP2002334869A2002-11-22
JP2007226170A2007-09-06
JP2007226204A2007-09-06
JPH1112258A1999-01-19
JP2004352670A2004-12-16
JP2001026571A2001-01-30
Other References:
See also references of EP 3842863A4
Attorney, Agent or Firm:
INABA, Yoshiyuki et al. (JP)
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