FILM FORMATION MATERIAL FOR RESIST PROCESS, PATTERN FORMATION METHOD, AND POLYMER

WIPO Patent Application WO/2017/154545

A1

The purpose of the present invention is to provide: a film formation material for a resist process in which it is possible to form a silicon-containing film that has exceptional adhesion to resist films, the resist patterns having excellent shape and the incidence of collapse being low; a pattern formation method in which the film formation material for a resist process is used; and a polymer suitable as such a film formation material for a resist process. This film formation material for a resist process contains a polymer having structural units derived from silane monomers that have two or more protected alcoholic hydroxyl groups, and an organic solvent. This pattern formation method is provided with: a step for forming a silicon-containing film on at least one surface of a substrate using a film formation material for a resist process; a step for forming a resist film on the surface of the silicon-containing film opposite to the substrate using a radiation-sensitive resin composition that includes a radiation-sensitive acid generator and a polymer having an acid-dissociative group; a step for exposing the resist film; and a step for developing the exposed resist film.

ANNO YUUSUKE (JP)
SEKO TOMOAKI (JP)
NISHIKORI KATSUAKI (JP)

PCT/JP2017/006231

September 14, 2017

February 20, 2017

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JSR CORP (JP)

G03F7/11; G03F7/32; H01L21/027; C08G77/14

WO2016009965A1	2016-01-21
WO2012039337A1	2012-03-29
WO2005077960A1	2005-08-25
WO2016121686A1	2016-08-04
WO2016080226A1	2016-05-26

JP2015129908A	2015-07-16
JP2007015974A	2007-01-25
JP2005352107A	2005-12-22
JP2005352104A	2005-12-22
JP2005048152A	2005-02-24
JP2006009000A	2006-01-12
JPS63101388A	1988-05-06

AMANO Kazunori (JP)

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