Title:
FILM FORMATION METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND APPARATUS FOR GROWING PLASMA ATOMIC LAYER
Document Type and Number:
WIPO Patent Application WO/2018/163502
Kind Code:
A1
Abstract:
The present invention pertains to a film formation technique using charged particles and suppressing nonuniformity in the film thickness distribution caused by a leakage magnetic field. Provided is a film formation method embodying the technical idea of switching between generating and not generating a magnetic field during a film formation operation such that the generation of the magnetic field is stopped during a period in which plasma is generated, and the magnetic field is generated during a period in which the plasma is not generated.
Inventors:
WASHIO KEISUKE (JP)
NAKATA MASAO (JP)
MATSUMOTO TATSUYA (JP)
SHIDA JUNICHI (JP)
NAKATA MASAO (JP)
MATSUMOTO TATSUYA (JP)
SHIDA JUNICHI (JP)
Application Number:
PCT/JP2017/039427
Publication Date:
September 13, 2018
Filing Date:
October 31, 2017
Export Citation:
Assignee:
JAPAN STEEL WORKS LTD (JP)
International Classes:
C23C16/04; C23C16/455; H01L21/31; H01L51/50; H05B33/04; H05B33/10
Domestic Patent References:
| WO2016170841A1 | 2016-10-27 |
Foreign References:
| JP2016206642A | 2016-12-08 |
Attorney, Agent or Firm:
TSUTSUI & ASSOCIATES (JP)
Download PDF: