FILM-FORMING COMPOSITION FOR SEMICONDUCTOR LITHOGRAPHY PROCESS, SILICON-CONTAINING FILM, AND METHOD FOR FORMING RESIST PATTERN

WIPO Patent Application WO/2019/151153

A1

The purpose of the present invention is to provide: a film-forming composition for a semiconductor lithography process, the film-forming composition being capable of forming a silicon-containing film having excellent resist film resolution, resist pattern collapse prevention, and etching resistance to oxygen-based gases; a silicon-containing film; and a method for forming a resist pattern. The present invention pertains to a film-forming composition for a semiconductor lithography process, the film-forming composition containing an orthoester and a compound having a Si-H bond. Said compound has, for example, at least one first structural unit selected from the group consisting of a structural unit represented by formula (1-1) and a structural unit represented by formula (1-2). In formulae (1-1) and (1-2), R1 and R2 are C1-20 monovalent organic groups, hydroxy groups, or halogen atoms. R3 is a substituted or unsubstituted C1-20 divalent hydrocarbon group that binds to two Si atoms.

SEKO TOMOAKI (JP)
TAJI TOMOYA (JP)
SATOU NOZOMI (JP)
TANAKA HIROMITSU (JP)
SAKAI TATSUYA (JP)

PCT/JP2019/002564

August 08, 2019

January 25, 2019

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JSR CORP (JP)

G03F7/11; G03F7/20

JP2000100700A	2000-04-07
JP2015094910A	2015-05-18
JP2017083849A	2017-05-18
JP2007334036A	2007-12-27
JP2014126717A	2014-07-07
JP2011090164A	2011-05-06
US20050112382A1	2005-05-26

AMANO Kazunori (JP)

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