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Patent Searching and Data


Title:
FILM-FORMING MATERIAL FOR RESIST PROCESS, PATTERN-FORMING METHOD, AND POLYSILOXANE
Document Type and Number:
WIPO Patent Application WO/2018/155377
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide: a film-forming material for a resist process, from which it is possible to form a silicon-containing film that has resistance to oxygen-based etching and exhibits excellent release properties by means of an alkaline hydrogen peroxide solution while maintaining solvent resistance; a pattern-forming method using said film-forming material; and a polysiloxane. The present invention pertains to a film-forming material for a resist process, containing: a polysiloxane having a first structural unit represented by formula (1) or (2); and a solvent. In formula (1), L1 represents a single bond or a divalent organic group having 1-20 carbon atoms; R1 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group; L2 represents a single bond or an (n+1)-valent organic group having 1-20 carbon atoms; n represents an integer of 1-3; and R2 represents a monovalent group including a polar group. In formula (2), L4 represents a single bond or a divalent organic group having 1-20 carbon atoms; and R4 represents a substituted or unsubstituted ethinyl group, or a substituted or unsubstituted ethenyl group.

Inventors:
SEKO TOMOAKI (JP)
OOTSUBO YUUSUKE (JP)
ISHIKAWA MASAYOSHI (JP)
TANAKA HIROMITSU (JP)
Application Number:
PCT/JP2018/005727
Publication Date:
August 30, 2018
Filing Date:
February 19, 2018
Export Citation:
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Assignee:
JSR CORP (JP)
International Classes:
G03F7/11; C08G77/20; G03F7/20; G03F7/26; H01L21/027
Domestic Patent References:
WO2016111210A12016-07-14
Foreign References:
JP2016074772A2016-05-12
JP2016011411A2016-01-21
Attorney, Agent or Firm:
AMANO Kazunori (JP)
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