Title:
FILM-FORMING METHOD AND FILM-FORMING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2007/049612
Kind Code:
A1
Abstract:
Disclosed is a film-forming method comprising a film-forming step wherein a thin
metal compound film of a high-melting-point metal is formed on the surface of
an object to be processed which is placed in an evacuatable process chamber by
supplying a high-melting-point metal organic raw material gas and a nitrogen-containing gas
into the process chamber. The partial pressure of the nitrogen-containing gas
is set at not more than 17% in the film-forming step for increasing the concentration of
carbon contained in the thin film.
Inventors:
YAMASAKI HIDEAKI (JP)
KAWANO YUMIKO (JP)
KAWANO YUMIKO (JP)
Application Number:
PCT/JP2006/321156
Publication Date:
May 03, 2007
Filing Date:
October 24, 2006
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
YAMASAKI HIDEAKI (JP)
KAWANO YUMIKO (JP)
YAMASAKI HIDEAKI (JP)
KAWANO YUMIKO (JP)
International Classes:
C23C16/34; H01L21/285; H01L29/78
Foreign References:
| JP2001049434A | 2001-02-20 | |||
| JPH11131233A | 1999-05-18 | |||
| JP2002050588A | 2002-02-15 | |||
| JPH10284440A | 1998-10-23 | |||
| JP2001077355A | 2001-03-23 |
Other References:
CHEN P.J. ET AL: "Surface spectroscopic studies of the deposition mechanisms of TiNx films from organometallic precursors", MAT. RES. SOC. SYMP. PROC., vol. 337, 1994, pages 555 - 560, XP003011909
Attorney, Agent or Firm:
YOSHITAKE, Kenji et al. (Room 323 Fuji Bldg., 2-3, Marunouchi 3-chom, Chiyoda-ku Tokyo, JP)
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