Title:
FILM FORMING METHOD AND FILM FORMING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2023/054032
Kind Code:
A1
Abstract:
This film forming method includes the following (A) to (D). (A) Preparation of a substrate having a surface that has a first region in which a first film is exposed and a second region in which a second film that is formed of a material different from that for the first film is exposed (B) Supply of a vapor of a reducing organic material to the surface of the substrate (C) Supply of a vapor of a metal halide to the surface of the substrate after the supply of the vapor of the reducing organic material (D) Selective formation of a metal film, which is configured from a metal element contained in the metal halide, in the second region with respect to the first region
Inventors:
FUSE TAKASHI (JP)
KUBOTA YUSUKE (JP)
YAMAUCHI SATOSHI (JP)
KUBOTA YUSUKE (JP)
YAMAUCHI SATOSHI (JP)
Application Number:
PCT/JP2022/034812
Publication Date:
April 06, 2023
Filing Date:
September 16, 2022
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
UNIV IBARAKI (JP)
UNIV IBARAKI (JP)
International Classes:
H01L21/285; C23C16/02; C23C16/14; H01L21/28; H01L21/3205; H01L21/768; H01L23/532
Foreign References:
| JPH03160718A | 1991-07-10 | |||
| JP2017152628A | 2017-08-31 | |||
| JP2017528597A | 2017-09-28 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
Download PDF: