Title:
FILM-FORMING METHOD AND STORAGE MEDIUM
Document Type and Number:
WIPO Patent Application WO/2011/033916
Kind Code:
A1
Abstract:
Disclosed is a film-forming method which comprises: a step in which a substrate is prepared by forming a Co film as a seed layer on the surface of the substrate; a step in which negative voltage is applied to the substrate in such a way that the surface potential of the Co becomes less than the oxidation potential of the Co; and a step in which a Cu film is formed on the Co film of the substrate by means of electrolytic plating, the Co film being immersed in a plating solution which is primarily copper sulfate solution while the negative voltage is still being applied to the substrate.
Inventors:
KOJIMA YASUHIKO (JP)
AZUMO SHUJI (JP)
AZUMO SHUJI (JP)
Application Number:
PCT/JP2010/064572
Publication Date:
March 24, 2011
Filing Date:
August 27, 2010
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
KOJIMA YASUHIKO (JP)
AZUMO SHUJI (JP)
KOJIMA YASUHIKO (JP)
AZUMO SHUJI (JP)
International Classes:
C25D7/12; C25D21/12; H01L21/288
Foreign References:
| JP2008007830A | 2008-01-17 | |||
| JP2007534175A | 2007-11-22 | |||
| JP2001123291A | 2001-05-08 | |||
| JP2000355798A | 2000-12-26 |
Attorney, Agent or Firm:
TAKAYAMA HIROSHI (JP)
Hiroshi Takayama (JP)
Hiroshi Takayama (JP)
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