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Patent Searching and Data


Title:
FILM-FORMING METHOD AND STORAGE MEDIUM
Document Type and Number:
WIPO Patent Application WO/2011/033916
Kind Code:
A1
Abstract:
Disclosed is a film-forming method which comprises: a step in which a substrate is prepared by forming a Co film as a seed layer on the surface of the substrate; a step in which negative voltage is applied to the substrate in such a way that the surface potential of the Co becomes less than the oxidation potential of the Co; and a step in which a Cu film is formed on the Co film of the substrate by means of electrolytic plating, the Co film being immersed in a plating solution which is primarily copper sulfate solution while the negative voltage is still being applied to the substrate.

Inventors:
KOJIMA Yasuhiko (650 Mitsuzawa, Hosaka-cho, Nirasaki-sh, Yamanashi 92, 〒4070192, JP)
小島 康彦 (〒92 山梨県韮崎市穂坂町三ツ沢650番地 東京エレクトロン株式会社内 Yamanashi, 〒4070192, JP)
Application Number:
JP2010/064572
Publication Date:
March 24, 2011
Filing Date:
August 27, 2010
Export Citation:
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Assignee:
TOKYO ELECTRON LIMITED (3-1 Akasaka 5-chome, Minato-ku Tokyo, 25, 〒1076325, JP)
東京エレクトロン株式会社 (〒25 東京都港区赤坂五丁目3番1号 Tokyo, 〒1076325, JP)
KOJIMA Yasuhiko (650 Mitsuzawa, Hosaka-cho, Nirasaki-sh, Yamanashi 92, 〒4070192, JP)
International Classes:
C25D7/12; C25D21/12; H01L21/288
Foreign References:
JP2008007830A
JP2007534175A
JP2001123291A
JP2000355798A
Attorney, Agent or Firm:
TAKAYAMA Hiroshi (Hirakawacho Tsujita Bldg. 2F, 1-7-20 Hirakawach, Chiyoda-ku Tokyo 93, 〒1020093, JP)
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