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Patent Searching and Data


Title:
FILM FOR SEMICONDUCTOR AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2011/004658
Kind Code:
A1
Abstract:
A film for a semiconductor comprises a support film, a second adhesive layer, a first adhesive layer, and a bonding layer stacked in this order. The film for a semiconductor allows a semiconductor wafer to be stacked on the bonding layer, supports the semiconductor wafer when the semiconductor wafer is cut and separated by dicing, and is structured so as to be selectively peeled off at the interface between the first adhesive layer and the bonding layer when the cut and separated semiconductor device is picked up. The film for a semiconductor is characterized in that an average thickness of the first adhesive layer is 20 to 100 µm. This makes it possible to easily and reliably control the front edge of the cut formed during dicing to stop within the first adhesive layer and to prevent problems that could occur when the cut reaches the support film.

Inventors:
YASUDA HIROYUKI (JP)
HIRANO TAKASHI (JP)
ODA NAOYA (JP)
Application Number:
PCT/JP2010/059189
Publication Date:
January 13, 2011
Filing Date:
May 31, 2010
Export Citation:
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Assignee:
SUMITOMO BAKELITE CO (JP)
YASUDA HIROYUKI (JP)
HIRANO TAKASHI (JP)
ODA NAOYA (JP)
International Classes:
H01L21/301; C09J7/38; C09J201/00
Domestic Patent References:
WO2008032367A12008-03-20
WO2008047610A12008-04-24
Foreign References:
JP2007027215A2007-02-01
JP2003034780A2003-02-07
JP2003142429A2003-05-16
Other References:
None
Attorney, Agent or Firm:
ASAHI Kazuo et al. (JP)
Morning ratio One husband (JP)
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