FILM STRUCTURE AND METHOD FOR PRODUCING SAME

WIPO Patent Application WO/2019/093471

A1

This film structure comprises: a substrate (11) which is a silicon substrate having an upper surface (11a) that is the (100) plane; an alignment film (12) which is formed on the upper surface (11a) and has a cubic crystal structure, while containing a zirconium oxide film oriented in the (100) direction; and a conductive film (13) which is formed on the alignment film (12) and has a cubic crystal structure, while containing a platinum film oriented in the (100) direction. The average interface roughness of an interface (IF1) between the alignment film (12) and the conductive film (13) is higher than the average interface roughness of an interface (IF2) between the substrate (11) and the alignment film (12).

KIJIMA TAKESHI (JP)
HAMADA YASUAKI (JP)

PCT/JP2018/041647

May 16, 2019

November 09, 2018

Click for automatic bibliography generation  

ADVANCED MATERIAL TECH INC (JP)

H01L41/319; C01G25/00; C23C14/08; C23C14/34; C23C14/35; H01L41/187; H01L41/316

WO2016009698A1

2016-01-21

JP2002164586A	2002-06-07
JP2008098381A	2008-04-24
JP2007036612A	2007-02-08
JP2015128089A	2015-07-09
JP2014084494A	2014-05-12

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M. KOBUNE ET AL.: "Growth and characterization of lead titanate single crystals grown in a magnesia single crystal crucible", YOGYO-KYOKAI-SHI, vol. 95, no. 11, 1987, pages 1053 - 1058

HIGUCHI, Takamitsu (JP)

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