Title:
FILM THICKNESS EVALUATION DEVICE AND FILM THICKNESS EVALUATION METHOD
Document Type and Number:
WIPO Patent Application WO/2010/013628
Kind Code:
A1
Abstract:
Provided is a film thickness evaluation device capable of evaluating, at a high resolution, the film thickness distribution of an insulator layer formed on a conductor surface. The film thickness evaluation device, while scanning a probe over a sample surface, obtains the absolute value of film thickness from the square root of the reciprocal of a two time-differential signal associated with the voltage corresponding to the electrostatic force acting between the probe and the sample and a differential signal associated with the distance between the probe and the sample. The film thickness evaluation device then performs mapping of the film thickness.
Inventors:
HEIKE SEIJI (JP)
HASHIZUME TOMIHIRO (JP)
HASHIZUME TOMIHIRO (JP)
Application Number:
PCT/JP2009/063128
Publication Date:
February 04, 2010
Filing Date:
July 22, 2009
Export Citation:
Assignee:
HITACHI LTD (JP)
HEIKE SEIJI (JP)
HASHIZUME TOMIHIRO (JP)
HEIKE SEIJI (JP)
HASHIZUME TOMIHIRO (JP)
International Classes:
G01B7/008; G01B21/08
Foreign References:
| JP2002529743A | 2002-09-10 | |||
| JPH0412547A | 1992-01-17 |
Other References:
OLBRICH A ET AL.: "Oxide thickness mapping of ultrathin A1203 at nanometer scale with conducting atomic force microscopy", APPL PHYS LETT, vol. 78, no. 19, 7 May 2001 (2001-05-07), pages 2934 - 2936
Attorney, Agent or Firm:
TSUTSUI, YAMATO (JP)
Tsutsui Daiwa (JP)
Tsutsui Daiwa (JP)
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