Title:
FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR FABRICATING SAME
Document Type and Number:
WIPO Patent Application WO/2016/173012
Kind Code:
A1
Abstract:
A film transistor array substrate and a method for fabricating same. The film transistor array substrate comprises: a substrate (1) and a film transistor and a storage capacitor that are formed on the substrate (1). The storage capacitor comprises a first electrode plate (31) located on the substrate (1), a gate insulating layer (3) or an etch stop layer (5) located on the first electrode plate (31), and a second electrode plate (32) located on the gate insulating layer (3) or the etch stop layer (5). Only one insulating layer, that is, the gate insulating layer (3) or the etch stop layer (5), exists between the two electrode plates of the storage capacitor. An insulating layer of a storage capacitor has a relatively small thickness, a capacitor area is relatively small, and an aperture ratio is relatively large.
Inventors:
LV XIAOWEN (CN)
Application Number:
PCT/CN2015/079421
Publication Date:
November 03, 2016
Filing Date:
May 21, 2015
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECT (CN)
International Classes:
H01L51/52; H01L21/77; H01L27/12; H01L51/56
Foreign References:
| CN103928470A | 2014-07-16 | |||
| CN103208506A | 2013-07-17 | |||
| CN104538403A | 2015-04-22 | |||
| CN103296034A | 2013-09-11 | |||
| CN102023439A | 2011-04-20 |
Attorney, Agent or Firm:
COMIPS INTELLECTUAL PROPERTY OFFICE (CN)
深圳市德力知识产权代理事务所 (CN)
深圳市德力知识产权代理事务所 (CN)
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