Title:
FIN STRUCTURE SPEAKER AND METHOD FOR FORMING SAME
Document Type and Number:
WIPO Patent Application WO/2022/252178
Kind Code:
A1
Abstract:
Disclosed are a fin structure speaker and a method for forming same. The fin structure speaker comprises a surrounding frame and a plurality of speaker fins located in the surrounding frame. Each speaker fin comprises: a fin substrate; and a piezoelectric layer that is non-uniform in thickness and located on the surfaces of two vertical sidewalls of the fin substrate. According to the technical solution of the present invention, the thickness of a piezoelectric layer material on the vertical sidewall of each fin structure of the fin speaker varies along the direction of the vertical sidewall of the fin (for example, in a wedge shape), and the specific thickness variation trend is that the thickness near the end of the speaker fin is thicker, and the thickness near the middle of the speaker fin is thinner. In this way, when the thickness of the piezoelectric layer varies along the extension direction of the vertical sidewall of the fin structure, the characteristics of large fin displacement and high displacement linearity can be met at the same time. On the other hand, since the thickness of the piezoelectric layer varies along the direction of the vertical sidewall of the fin structure, the resonance of the fin structure in a broadband can reduce the Q value and increase the bandwidth, thereby improving the frequency response of the speaker.
Inventors:
ZHANG MENGLUN (CN)
Application Number:
PCT/CN2021/098112
Publication Date:
December 08, 2022
Filing Date:
June 03, 2021
Export Citation:
Assignee:
UNIV TIANJIN (CN)
International Classes:
H04R19/02; H04R17/00; H04R19/00; H04R31/00
Domestic Patent References:
| WO2019066935A1 | 2019-04-04 |
Foreign References:
| CN102969353A | 2013-03-13 | |||
| US20190206980A1 | 2019-07-04 | |||
| CN108511392A | 2018-09-07 |
Attorney, Agent or Firm:
CHINA SMART INTELLECTUAL PROPERTY LTD. (CN)
Download PDF: