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Title:
FINE UNEVENNESS STRUCTURE BODY, DRY ETCHING THERMO-REACTIVE RESIST MATERIAL, MOLD FABRICATION METHOD, AND MOLD
Document Type and Number:
WIPO Patent Application WO/2013/111812
Kind Code:
A1
Abstract:
Provided is a fine unevenness structure body (10), comprising an etching layer (11), and a resist layer (12) which is configured of a dry etching thermo-reactive resist material which is disposed upon the etching layer (11). An unevenness structure which corresponds to opening parts (12a) which are formed in the resist layer (12) is formed in the etching layer (11). The pattern pitch (P) of the fine pattern of the unevenness structure is 1-10nm. The pattern depth (H) of the fine pattern is 1-10nm. The pattern cross-section shapes of the fine pattern are trapezoids, triangles, or mixtures of these. The dry etching thermo-reactive resist material has at least one primary constituent element selected from a group consisting of copper, niobium, tin, manganese, oxides and nitrides of these, and nickel bismuth.

Inventors:
MITAMURA YOSHIMICHI (JP)
Application Number:
PCT/JP2013/051432
Publication Date:
August 01, 2013
Filing Date:
January 24, 2013
Export Citation:
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Assignee:
ASAHI CHEMICAL IND (JP)
International Classes:
G03F7/004; B29C33/38; G03F7/40; H01L21/027
Domestic Patent References:
WO2010044400A12010-04-22
WO2011002060A12011-01-06
WO2010044400A12010-04-22
Foreign References:
JP2005100602A2005-04-14
JP2007144995A2007-06-14
JP2007315988A2007-12-06
Other References:
"Latest Resist Materials", JOHOKIKO CO., LTD., pages: 59,76
SPIE, vol. 3424, 1998, pages 20
"Etching technology of micro - nano device", CMC PUBLISHING CO., LTD., pages: 159 - 169
"Sputter Technology", KYORITSU SHUPPAN CO., LTD., pages: 15,18
"Sputter Technology", KYORITSU SHUPPAN CO., LTD., pages: 15,18
See also references of EP 2808735A4
Attorney, Agent or Firm:
AOKI, HIROYOSHI (JP)
Hiroyoshi Aoki (JP)
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Claims: