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Title:
FIVE-ELEMENTS N-TYPE THERMOELECTRIC MATERIAL REALIZING POWDER ALLOY SINTERING PHASE TRANSFORMATION BASED ON CRYSTAL TOPOLOGY, AND PREPARATION METHOD
Document Type and Number:
WIPO Patent Application WO/2019/214158
Kind Code:
A1
Abstract:
A five-elements n-type thermoelectric material realizing powder alloy sintering phase transformation based on crystal topology, and a preparation method. The chemical formula of the n-type thermoelectric material is Bi2-x-ySbxSyTe3-zSez, wherein 0.74 ≤ x ≤ 1.2, 0.04 ≤ y ≤0.06, and 0.2 ≤ z ≤0.45. Compared to other n-type thermoelectric materials, the five-elements n-type thermoelectric material experiences the transformation from a p-type alloy to a p-type powder alloy ingot and then to an n-type thermoelectric material in the preparation process, and the finally obtained five-elements n-type thermoelectric material has the advantages of high Seebeck coefficient, high electrical conductivity, low thermal conductivity coefficient, high ZT value and excellent thermoelectric properties. A thermoelectric chip is manufactured by using a five-elements p-type thermoelectric material and a five-elements n-type thermoelectric material in the five-elements thermoelectric material system, and has good thermoelectric performance and a high thermoelectric conversion rate.

Inventors:
LUO, Yiping (Leizig Industrial Zone, No. 383 Jiangren 3rd Rd., Renhe Town, Baiyun Dist, Guangzhou Guangdong 0, 510470, CN)
LIN, Bin (Leizig Industrial Zone, No. 383 Jiangren 3rd Rd., Renhe Town, Baiyun Dist, Guangzhou Guangdong 0, 510470, CN)
Application Number:
CN2018/109730
Publication Date:
November 14, 2019
Filing Date:
October 10, 2018
Export Citation:
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Assignee:
LEIZIG (GUANGDONG) THERMOELECTRIC TECHNOLOGIES CO., LTD. (Office Card No. 76 Kaide Chuang Dream Space, The First Floor of Building C2 Innovation Building, No. 182 Science Avenue, Science City, High-Tech Industrial Development Zon, Guangzhou Guangdong 0, 510470, CN)
International Classes:
H01L35/16; H01L35/18; H01L35/34
Attorney, Agent or Firm:
CHOFN INTELLECTUAL PROPERTY (Room 1215-1218, Floor 12Left Bank Community No.68 Beisihuanxilu, Haidian District, Beijing 0, 100080, CN)
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