Title:
FLASH MEMORY PROGRAMMING USING GATE INDUCED JUNCTION LEAKAGE CURRENT
Document Type and Number:
WIPO Patent Application WO2005048269
Kind Code:
A3
Abstract:
A method for programming a storage element and a storage element programmed using gate induced junction leakage current are provided. The element may include at least a floating gate on a substrate, an active region in the substrate, and a second gate adjacent to the floating gate. The method may include the steps of: creating an inversion region in the substrate below the floating gate by biasing the first gate; and creating a critical electric field adjacent to the second gate. Creating a critical electric field may comprise applying a first positive bias to the active region; and applying a bias less than the first positive bias to the second gate. The element further includes a first bias greater than zero volts applied to the active region and a second bias greater than the first bias applied to the second gate. The first and third bias are selected to create leakage current in the substrate between the floating gate and the select gate.
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Inventors:
LUTZE JEFFREY W
PANG CHAN-SUI (US)
PANG CHAN-SUI (US)
Application Number:
PCT/US2004/036924
Publication Date:
July 28, 2005
Filing Date:
November 04, 2004
Export Citation:
Assignee:
SANDISK CORP (US)
LUTZE JEFFREY W
PANG CHAN-SUI (US)
LUTZE JEFFREY W
PANG CHAN-SUI (US)
International Classes:
G11C16/04; G11C16/10; (IPC1-7): G11C16/04; G11C16/10
Foreign References:
| US6091634A | 2000-07-18 | |||
| US5523969A | 1996-06-04 | |||
| US20040130947A1 | 2004-07-08 |
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