Title:
FLASH MEMORY STORAGE STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2018/121136
Kind Code:
A1
Abstract:
A flash memory storage structure and a manufacturing method therefor. The method comprises: depositing a polycrystalline silicon layer (200) on a substrate structure (100); using the polycrystalline silicon layer (200) to form a floating gate (210) and a field oxide structure (220) covering the floating gate (210); thinning the field oxide structure (220) to expose the tip of the floating gate (210); forming a tunnel oxide layer (300) on the field oxide structure (300) and the floating gate (210); and forming a control gate (400) on the tunnel oxide layer (300).
Inventors:
LIANG ZHIBIN (CN)
ZHANG SONG (CN)
LIU TAO (CN)
JIN YAN (CN)
WANG DEJIN (CN)
ZHANG SONG (CN)
LIU TAO (CN)
JIN YAN (CN)
WANG DEJIN (CN)
Application Number:
PCT/CN2017/112452
Publication Date:
July 05, 2018
Filing Date:
November 23, 2017
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
International Classes:
H01L21/28; H01L27/11521; H01L29/423
Domestic Patent References:
| WO2013170722A1 | 2013-11-21 |
Foreign References:
| CN101207031A | 2008-06-25 | |||
| CN101162691A | 2008-04-16 | |||
| CN101170082A | 2008-04-30 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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