Title:
FLUORINATED GRAPHENE PASSIVATED ALGAN/GAN-BASED HEMT DEVICE AND MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2017/080126
Kind Code:
A1
Abstract:
Provided are a fluorinated graphene passivated AlGaN/GaN-based HEMT device and a manufacturing method therefor. A single-layer graphene (108) is transferred to the surface of AlGaN (104), processed with fluoride ions and then insulated, thus replacing a conventional nitride passivation layer; and then, a high-k material (109) is grown on the graphene (108), the high-k material and the graphene together serving as a gate dielectric, so as to prepare an AlGaN/GaN metal-insulating layer-semiconductor (MIS) HEMT device. Compared with conventional passivation structures, the graphene (108) has the advantages of a thin physical thickness (on a sub-nanometer scale) and a low additional threshold voltage. Furthermore, the single-layer graphene (108) also has a good isolation performance, and during the growth of the high-k material, prevents the surface of the AlGaN (104) having surface traps produced by oxidisation so as to achieve a passivation effect. In addition, the fluorination process can introduce negative charges into the graphene (108), facilitate the positive shift of the threshold voltage of the HEMT device, and provide a possibility for realising a reinforced device. This structure and method are simple, have noticeable effects, and have broad application prospects in the technical fields of microelectronics and solid-state electronics.
Inventors:
CHENG XINHONG (CN)
SHEN LINGYAN (CN)
WANG ZHONGJIAN (CN)
CAO DUO (CN)
ZHENG LI (CN)
WANG QIAN (CN)
ZHANG DONGLIANG (CN)
LI JINGJIE (CN)
YU YUEHUI (CN)
SHEN LINGYAN (CN)
WANG ZHONGJIAN (CN)
CAO DUO (CN)
ZHENG LI (CN)
WANG QIAN (CN)
ZHANG DONGLIANG (CN)
LI JINGJIE (CN)
YU YUEHUI (CN)
Application Number:
PCT/CN2016/075635
Publication Date:
May 18, 2017
Filing Date:
March 04, 2016
Export Citation:
Assignee:
SHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS (CN)
International Classes:
H01L21/335; H01L29/06; H01L29/778
Foreign References:
| CN105304689A | 2016-02-03 | |||
| CN1557024A | 2004-12-22 | |||
| CN103208425A | 2013-07-17 | |||
| US8987780B2 | 2015-03-24 | |||
| CN103247689A | 2013-08-14 |
Attorney, Agent or Firm:
J.Z.M.C.PATENT AND TRADEMARK LAW OFFICE (CN)
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